{"product_id":"9783662570265","title":"The Source\/Drain Engineering of Nanoscale Germanium-based MOS Devices","description":"This book mainly focuses on reducing the high parasitic resistance in the source\/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe\/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal\/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source\/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source\/drain engineering technique for high-performance CMOS devices at future technology node.\u003cp\u003e\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePublication Year: \u003c\/strong\u003e2016\u003cbr\u003e\u003cstrong\u003eImprint: \u003c\/strong\u003eSpringer Berlin Heidelberg\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003eFormat: P\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003eWeight (Gram): 1503\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003cbr\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003c\/p\u003e","brand":"Zhiqiang Li","offers":[{"title":"Default Title","offer_id":41277623206066,"sku":"9783662570265","price":124.79,"currency_code":"SGD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0502\/5382\/4178\/products\/3662570262.01_SCLZZZZZZZ.jpg?v=1636201392","url":"https:\/\/readabook.store\/products\/9783662570265","provider":"READABOOK BY ALKEM","version":"1.0","type":"link"}