FinFETs and Other Multi-Gate Transistors

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Publication Year: 2008
Imprint: Springer US
Format: H
Weight (Gram): 705